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Thermal oxidation is one of various methods used for neighboring element isolation. Problems of thermal oxidation, related with LOCOS, PBL and SWAMI technologies was researched. The main purpose of this paper is to present stress, which appears during thermal oxidation in micro and nano scales levels in mentioned above technologies. Also relationship between thermal oxidation and crystallographic planes orientation are analyzed, because growing oxide rate is different on surface and edges with the same crystallographic planes orientation. Thermal oxidation process is simulated with ATHENA and the deal-grove model is used for the oxide growth kinetics.