Cart (Loading....) | Create Account
Close category search window
 

Accurate Dose Control in High Pressure Condition on Medium Current Ion Implanters

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Sano, M. ; SEN Corp., Ehime ; Sato, F. ; Sugitani, M.

On ion implantation, outgassing from photoresist coating wafer can induce a significant dose shift which can result in fluctuations of device characteristics within a wafer and/or in wafer-to-wafer. Pcomp, which is a system that compensates beam currents as a function of the beam line pressure, improves dose accuracy in implantation onto photoresist-coated wafers. Pcomp is effective even for medium current ion implanters as well as for batch-type implanters. It is also inevitable to use Pcomp on medium current implanters with high power beams, especially at a high energy region.

Published in:

Junction Technology, 2007 International Workshop on

Date of Conference:

8-9 June 2007

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.