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Accurate Dose Control in High Pressure Condition on Medium Current Ion Implanters

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3 Author(s)
Sano, M. ; SEN Corp., Ehime ; Sato, F. ; Sugitani, M.

On ion implantation, outgassing from photoresist coating wafer can induce a significant dose shift which can result in fluctuations of device characteristics within a wafer and/or in wafer-to-wafer. Pcomp, which is a system that compensates beam currents as a function of the beam line pressure, improves dose accuracy in implantation onto photoresist-coated wafers. Pcomp is effective even for medium current ion implanters as well as for batch-type implanters. It is also inevitable to use Pcomp on medium current implanters with high power beams, especially at a high energy region.

Published in:

Junction Technology, 2007 International Workshop on

Date of Conference:

8-9 June 2007

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