By Topic

Demonstration of high power blue-green light emitting diode on semipolar (1122) bulk GaN substrate

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

9 Author(s)
Zhong, H. ; Univ. of California, Santa Barbara ; Tyagi, A. ; Fellows, N.N. ; Chung, R.B.
more authors

Blue-green InGaN/GaN multiple-quantum-well light emitting diodes with peak emission wavelength of 480 nm were grown on low extended defect density semipolar (1122) bulk GaN substrates by conventional metal organic chemical vapour deposition. The calculated external quantum efficiency and output power at a drive current of 20 mA under pulsed operations (10% duty cycle) were 18% and 9 mW, respectively. The device exhibited small electroluminescence wavelength shift (4.5 nm) with drive currents ranging from 30 to 100 mA, indicating significant reduction of polarisation-related internal electric fields.

Published in:

Electronics Letters  (Volume:43 ,  Issue: 15 )