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2.3 μm type-I quantum well GaInAsSb/AlGaAsSb/GaSb laser diodes with quasi-CW output power of 1.4W

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5 Author(s)
Donetsky, D. ; SUNY at Stony Brook, Stony Brook ; Kipshidze, G. ; Shterengas, L. ; Hosoda, T.
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Improvement of the output parameters of 2.3 mum GaSb-based laser diodes was observed with increase of the quantum-well compressive strain. A continuous-wave (CW) power of 1.15 W and quasi-CW power of 1.4 W were obtained at room temperature from 2 mm-long single emitters with a 100 mum-aperture.

Published in:

Electronics Letters  (Volume:43 ,  Issue: 15 )