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Impact of Parameter Variations and Random Dopant Fluctuations on Short-Channel Fully Depleted SOI MOSFETs With Extremely Thin BOX

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3 Author(s)
Ohtou, T. ; Tokyo Univ., Tokyo ; Sugii, N. ; Hiramoto, T.

Characteristic variations of fully depleted silicon-on-insulator (SOI) MOSFETs with extremely thin buried oxide are examined by device simulations. It is found, for the first time, that a SOI device with low channel impurity concentration and high substrate concentration has high immunity to both parameter variations and random dopant fluctuations (RDFs). Fully depleted (FD) silicon-on-insulator (SOI) MOSFET, random dopant fluctuation (RDF), thin buried oxide (BOX), variability.

Published in:

Electron Device Letters, IEEE  (Volume:28 ,  Issue: 8 )