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Pinch-Off Voltage-Adjustable High-Voltage Junction Field-Effect Transistor

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4 Author(s)
Chorng-Wei Liaw ; Nat. Tsing Hua Univ., Hsinchu ; Leaf Yeh ; Ming-Jang Lin ; Chrong Jung Lin

In this letter, a novel type of high-voltage n-channel junction field-effect transistor (JFET) was designed using a conventional n-channel laterally diffused metal-oxide-semiconductor (n-LDMOS) without changing any step in the process. High-voltage JFET can be a start-up device in power factor correction, dc-ac converters, and ac-dc converters for providing a self-powered circuit and minimizing standby power losses without gate control because of its negative threshold voltage. Experimental results show that an n-LDMOS with this JFET structure can achieve a reverse blocking voltage of more than 700 V with very low leakage current. The pinch-off voltage can be designed by changing n-well width to meet the circuit requirement.

Published in:

Electron Device Letters, IEEE  (Volume:28 ,  Issue: 8 )