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The effect of polycarbosilane (PCS) doping on the superconducting properties of MgB2 was systematically investigated. Highly reactive C and Si appeared after PCS decomposition facilitating incorporation of C into the MgB2 lattice, as well as the reaction between Si and Mg, resulting in formation of a large number of small Mg2Si particles within MgB2 grains. C-substitution induced crystal lattice defects and impurities act as strong pinning centers, significantly improving Jc(Ba) performance in the high field region. The differences in the effects of SiC and PCS doping have been studied and are described to the structural transformation that occurs in MgB2 after doping with these two materials.