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Using our newly developed short pre-annealing and intermediate rolling process, the property of MgB2/Fe tapes doped with nano-Si3N4 particles was further improved. The highest Jc value at 10 T and 4.2 K reached 6310 A/cm2 in the sample doped with 1% nano-Si3N4 by using our new process, which was obviously higher than that of 4550 A/cm2 obtained in the sample made via the conventional in situ PIT process. Furthermore, it was found that the improvement of Jc became smaller with increasing the doping concentration of nano-Si3N4 particles. This confirmed that our new process contributed to the Jc enhancement mainly through increasing the core density and connectivity. Adding more nano-Si3N4 introduced more impurities at the grain boundaries, which made our new process less effective.