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This paper discusses the discrete channel dopant effects on the statistical variation of random telegraph signal (RTS) magnitude, which is defined by the threshold-voltage shift by RTS in MOSFETs. An analytical model for the statistical variation of RTS magnitude is presented. Considering discrete dopant effects, the RTS magnitude of MOSFETs exhibits a log-normal distribution, while the threshold voltage itself exhibits a normal distribution. The threshold-voltage shift by RTS will become a serious concern in 50-nm Flash memories and beyond.