Close category search window
 

Low-Impedance VHF and UHF Capacitive Silicon Bulk Acoustic-Wave Resonators—Part II: Measurement and Characterization

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Pourkamali, S. ; University of Denver, Denver ; Ho, G.K. ; Ayazi, F.

In this part of the paper, extensive measurement results on the resonance, frequency tuning, and temperature characteristics of the silicon bulk acoustic-wave resonators (SiBARs) that were described in Part I will be presented and justified. Bulk acoustic wave resonators, high-aspect- ratio polysilicon and single-crystal silicon (HARPSS), MEMS, micromachining, micromechanical resonators, silicon resonators.

Published in:
Electron Devices, IEEE Transactions on  (Volume:54 ,  Issue: 8 )

Date of Publication: Aug. 2007

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.