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Low-Temperature Annealing Effect of RF Inductor With FeNi-SiO2 Granular Film

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5 Author(s)

A low-temperature annealing process in vacuum is proposed to enhance the inductance of RF inductors with FeNi-SiO2 magnetic granular films. Due to the great improvement of soft magnetic property in the 200degC and 350degC annealed film, the inductance is enhanced by 9.6% (200degC) and 8.3% (350degC), respectively, compared with the case of as-deposited film inductor. The peak value of quality factor, which is 9.18 for the as-deposited film inductor, is also increased to 9.27 (200degC ) and 12.27 (350degC), respectively.

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Magnetics, IEEE Transactions on  (Volume:43 ,  Issue: 8 )