By Topic

A 1-D Photonic Band Gap Tunable Optical Filter in (110) Silicon

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Lipson, A. ; Microsaic Syst. Ltd., Guildford ; Yeatman, E.M.

In this paper, we describe an electrostatically tunable optical bandpass filter that is fabricated in (110) silicon. Deep reactive-ion etching is the main process that is used to fabricate the overall device structure. To create the highly parallel surfaces that are needed for the photonic band gap elements, electrochemical (KOH) etching of the vertical (111) planes is then used. Back etching is used to release the moving parts. Fiber pigtails are attached in etched alignment grooves, and fiber-fiber insertion loss below 11 dB was obtained. The measured passband width was 3 nm with a tuning range of 8 nm.

Published in:

Microelectromechanical Systems, Journal of  (Volume:16 ,  Issue: 3 )