By Topic

Novel Reliable RF Capacitive MEMS Switches With Photodefinable Metal–Oxide Dielectrics

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Guoan Wang ; Georgia Inst. of Technol., Atlanta ; Michael Romeo ; Cliff Henderson ; John Papapolymerou

In this paper, the design, fabrication, and measurement of reliable low-cost capacitive radio-frequency microelectromechanical systems switches with a novel fabrication approach using direct photodefinable high-k metal oxides are presented. In this approach, a radiation-sensitive metal-organic precursor is deposited via spin coating and converted to a high-k metal oxide via ultraviolet exposure. Measurements of the bridge-type switches have been done up to 40 GHz. These switches are reliable (> 340 million cycles) and exhibited low insertion loss (about 0.3 dB at 20 GHz) and better isolation (about 24 dB at 20 GHz) at frequencies below the resonant frequency as compared to switches that are fabricated using a simple silicon nitride dielectric.

Published in:

Journal of Microelectromechanical Systems  (Volume:16 ,  Issue: 3 )