Referenced Items are not available for this document.
The impact of the reverse short channel effect (RSCE) on device current is stronger in the subthreshold region due to the reduced drain-induced-barrier-lowering (DIBL) and the exponential dependency of current on threshold voltage. This paper describes a device size optimization method for subthreshold circuits utilizing RSCE to achieve high drive current, low device capacitance, less sensitivity to random dopant fluctuations, and better subthreshold swing. Simulation results using ISCAS benchmark circuits show that the critical path delay and power consumption can be improved by up to 10.4% and 34.4%, respectively
Published in:
Low Power Electronics and Design, 2006. ISLPED'06. Proceedings of the 2006 International Symposium on
Date of Conference: 4-6 Oct. 2006
- Page(s):
- 127 - 130
- Print ISBN:
- 1-59593-462-6
- INSPEC Accession Number:
- 9165152
- Conference Location :
- Tegernsee
- Digital Object Identifier :
- 10.1109/LPE.2006.4271820
- Product Type:
- Conference Publications
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