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In 1989, Pelgrom et al. published a mismatch model for MOS transistors, where the variation of parameter mismatch between two identical transistors is given by two independent terms: a size-dependent term and a distance-dependent term. Some CAD tools based on a nonphysical interpretation of Pelgrom's distance term result in excessive computationally expensive algorithms, which become nonviable even for circuits with a reduced number of transistors. Furthermore, some researchers are reporting new variations on the original nonphysically interpreted algorithms, which may render false results. The purpose of this paper is to clarify the physical interpretation of the distance term of Pelgrom and indicate how to model it efficiently in prospective CAD tools.
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on (Volume:26 , Issue: 8 )
Date of Publication: Aug. 2007