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This paper evaluates the hot-carrier performance of the n-channel high-voltage (30 V) MOSFET device. This device is widely used in high-voltage linear products. It can withstand 30 V across any two terminals. This large voltage range requires thorough hot-carrier analysis, investigating potential hot-carrier mechanisms not believed to have been previously explored in the literature. It is established that two different hot-carrier generation mechanisms are occurring: one at ISUB(max) and another at IKIRK. These are investigated through combined device parametric, technology computer-aided design (TCAD) simulation, and hot-carrier reliability data.