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Browse Journals & Magazines > Device and Materials Reliabil ...> Volume:7 Issue:1 Help

Investigation of High-Voltage MOSFET Reliability in IKIRK Region

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6 Author(s)
O'Donovan, V. ; Analog Devices, Limerick ; Deignan, A. ; Moloney, K. ; Daly, P.
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This paper evaluates the hot-carrier performance of the n-channel high-voltage (30 V) MOSFET device. This device is widely used in high-voltage linear products. It can withstand 30 V across any two terminals. This large voltage range requires thorough hot-carrier analysis, investigating potential hot-carrier mechanisms not believed to have been previously explored in the literature. It is established that two different hot-carrier generation mechanisms are occurring: one at ISUB(max) and another at IKIRK. These are investigated through combined device parametric, technology computer-aided design (TCAD) simulation, and hot-carrier reliability data.

Published in:
Device and Materials Reliability, IEEE Transactions on  (Volume:7 ,  Issue: 1 )

Date of Publication: March 2007

Page(s):
197 - 199
ISSN :
1530-4388
INSPEC Accession Number:
9607591
Digital Object Identifier :
10.1109/TDMR.2007.891532
Product Type:
Journals & Magazines
Date of Current Version :
16 July 2007
Issue Date :
March 2007
Sponsored by :
IEEE Electron Devices Society

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