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Impact of Strain or Ge Content on the Threshold Voltage of Nanoscale Strained-Si/SiGe Bulk MOSFETs

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3 Author(s)
M. Jagadesh Kumar ; Indian Inst. of Technol., New Delhi ; Vivek Venkataraman ; Susheel Nawal

The impact of strain on the threshold voltage of nanoscale strained-Si/SiGe MOSFETs is studied by developing a compact analytical model. Our model includes the effects of strain (Ge mole fraction in SiGe substrate), short-channel length, source/drain junction depths, substrate (body) doping, strained silicon thin-film thickness, gate work function, and other device parameters. The model correctly predicts a decrease in threshold voltage with increasing strain in the silicon thin film, i.e., with increasing Ge concentration in SiGe substrate. The accuracy of the results obtained using our analytical model is verified using two-dimensional device simulations.

Published in:

IEEE Transactions on Device and Materials Reliability  (Volume:7 ,  Issue: 1 )