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Accurate large-signal single current source thermal model for GaAs MESFET/HEMT

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5 Author(s)

An accurate approach to the simulation of the DC and pulsed IV characteristics of GaAs MESFETs over the -70 to -+70degC temperature range is presented. The new approach, suitably modified can be applied to existing DC models to increase their accuracy and range of operation.

Published in:

Electronics Letters  (Volume:43 ,  Issue: 14 )

Date of Publication:

July 5 2007

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