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In this paper, we present a new analytical model for RF and microwave noise model of nanoscale double-gate MOSFET. The model is based on a compact model for charge quantization within the channel and it includes overshoot velocity effects. Using the active transmission line method, we calculate the RF and noise performance.
Electron Devices, 2007 Spanish Conference on
Date of Conference: Jan. 31 2007-Feb. 2 2007