In this paper, we present a new analytical model for RF and microwave noise model of nanoscale double-gate MOSFET. The model is based on a compact model for charge quantization within the channel and it includes overshoot velocity effects. Using the active transmission line method, we calculate the RF and noise performance.
Published in:
Electron Devices, 2007 Spanish Conference on
Date of Conference: Jan. 31 2007-Feb. 2 2007