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A Compact Quantum Model of Nanoscale Double-Gate MOSFET for RF and Noise Simulations

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4 Author(s)
Roldan, A.M. ; Univ. Rovira i Virgili, Tarragona ; Nae, B. ; Moldovan, O. ; Iniguez, B.

In this paper, we present a new analytical model for RF and microwave noise model of nanoscale double-gate MOSFET. The model is based on a compact model for charge quantization within the channel and it includes overshoot velocity effects. Using the active transmission line method, we calculate the RF and noise performance.

Published in:

Electron Devices, 2007 Spanish Conference on

Date of Conference:

Jan. 31 2007-Feb. 2 2007

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