By Topic

A CAD model of Nanoscale Double-Gate MOSFET for RF and Noise applications including quantum and non-stationary effects

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Roldan, A.M. ; Univ. Rovira i Virgili, Tarragona ; Nae, B. ; Moldovan, O. ; Iniguez, B.

This paper presents a new approach for an analytical model of nanoscale double-gate (DG) MOSFET. The equivalent circuit is considered over a fully distributed active line, opening the door to obtain a compact and unified small equivalent circuit that includes noise contributions.

Published in:

Electron Devices, 2007 Spanish Conference on

Date of Conference:

Jan. 31 2007-Feb. 2 2007