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Quantum Dot Infrared Photodetector for mid-infrared detection at high temperatures

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5 Author(s)
R. Gargallo-Caballero ; Sistemas Optoelectrónicos y Microtecnología (ISOM) - Departamento de Ingeniería Electrónica, ETSI, Telecomunicación, Universidad Politécnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid, Spain. e-mail: rgargallo@die.upm.es ; M. Sanz ; A. Guzman ; E. Calleja
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In this work, InAs quantum dot infrared photodetectors (QDIPs) have been grown in this work by molecular beam epitaxy (MBE) growth for the detection of the mid-wavelength infrared radiation (MWIR). Firstly, we carried out an optimization of the growth conditions of the InAs quantum dots (QD), and later we designed and grew the device heterostructure with an active zone located between two AlGaAs barriers and using a modulation doping technique. As confirmed by spectral response measurements, our QDIPs were sensible in the 3-5 mum region, achieving operating temperatures as high as 150 K.

Published in:

2007 Spanish Conference on Electron Devices

Date of Conference:

Jan. 31 2007-Feb. 2 2007