Quantum Dot Infrared Photodetector for mid-infrared detection at high temperatures

In this work, InAs Quantum Dot Infrared Photodetectors (QDIPs) have been grown in this work by molecular beam epitaxy (MBE) growth for the detection of the mid-wavelength infrared radiation (MWIR). Firstly, we carried out an optimization of the growth conditions of the InAs quantum dots (QD), and later we designed and grew the device heterostructure with an active zone located between two AlGaAs barriers and using a modulation doping technique. As confirmed by spectral response measurements, our QDIPs were sensible in the 3-5 μm region, achieving operating temperatures as high as 150K.