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Near Room Temperature InAs Quantum Wires Lasers on InP at Short Wavelength Infrared

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6 Author(s)
Suarez, F. ; Inst. de Microelectron. de Madrid, Tres Cantos ; Fuster, D. ; Gonzalez, L. ; Gonzalez, Y.
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In this work, we present results on the growth by atomic layer molecular beam epitaxy and characterization of lasers with three stacked layers of InAs quantum wires (QWR) as active zone and aluminum free waveguides on (001) InP substrates. The separated confinement heterostructure consists of n-p InP claddings and a waveguide formed by short period superlattices of (InP)5/(GaInAs)4 lattice matched to the InP substrate. The optimum growth conditions (substrate temperature and As and P pressures) have been determined to obtain waveguides with a flat surface in order to get an uniform QWR distribution. Lasing emission is observed at a wavelength of -1.66 mum up to 280K from 40mum x 1000mum devices, with a threshold current density at that temperature of 3.6 kA/cm2.

Published in:

Electron Devices, 2007 Spanish Conference on

Date of Conference:

Jan. 31 2007-Feb. 2 2007