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Groove-Coupled InGaAs/GaAs Quantum Dot Laser/Waveguide on Silicon

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3 Author(s)
Jun Yang ; Michigan Univ., Ann Arbor ; Mi, Z. ; Bhattacharya, Pallab

We demonstrate a monolithically integrated laser-waveguide device implemented with InGaAs/GaAs quantum dot heterostructures grown on silicon by molecular beam epitaxy. Focused-ion-beam (FIB) etching is utilized to form high-quality laser mirrors for feedback and grooves for coupling and electrical isolation. Based on a transmission matrix and a generalized beam propagation approach in terms of intensity moments and Gouy phase shifts, a self-consistent model is developed to estimate the reflectivity and coupling coefficient at etched grooves and optimize these parameters for real devices. High-quality FIB-etched facets with a reflectivity of R~0.28 and efficient coupling with coupling coefficients of up to 30% for well-defined grooves have been achieved.

Published in:

Lightwave Technology, Journal of  (Volume:25 ,  Issue: 7 )

Date of Publication:

July 2007

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