By Topic

Study of Porous Silicon Fabricated by Pulsed Anodic Etching of n-Si(100)

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
N K Ali ; School of Physics, Universiti Sains Malaysia, 11800, Penang, MALAYSIA. Email: ; M R Hashim ; A Abdul Aziz

It is well known that porous silicon (PS) has a large range of morphologies. A pulsed anodic etching method is developed to fabricate uniform PS with different surface morphologies. Changes of PS on n-type Si surface after anodization with pulsed current with varying delay time were studied by scanning electron microscopy (SEM) and Raman spectroscopy. The SEM images show that a uniform and well defined silicon columns can be obtained with a correct choice of delay time. Raman scattering from the optical phonon in PS showed redshift of the phonon frequency, broadening and increased asymmetry of the Raman mode on decreasing delay time. Using the phonon confinement model, the average diameter of Si nano- crystallites has been estimated as 2, 2.6, 3, and 3.4 nm for delay time of 12, 25, 50, and 75 msec respectively.

Published in:

2006 IEEE International Conference on Semiconductor Electronics

Date of Conference:

Oct. 29 2006-Dec. 1 2006