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Abstract Silicon carbide (SiC) has received special attention in recent years because of its remarkable properties. This work presents the investigation on the growth of Si-based SiC using carbon monoxide (CO) compared to the treated carbon dioxide (CO2) as reported earlier. Experiments results has revealed the existence of Si-C bond and the bond formed on silicon (Si) surface through the characterization using X-ray diffraction (XRD) and Raman spectroscopy (RS). Thickness study is carried out show that growth using carbon monoxide has a thicker layer of SiC at the same growth condition compared to treated carbon dioxide. The reflective index (RI) of the growth SiC was measured. This growth technique is promising and shows great potential of producing relatively desirable quality SiC films for electronic devices fabrication.