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Today, measurement of 65 nm CMOS and 130 nm-based SiGe HBTs technologies demonstrate both Ftau (current gain cut-off frequency) and Fmax (maximum oscillation frequency) higher than 200 GHz, which are clearly comparable to advanced commercially available 100 nm III-V HEMT. Consequently, the integration of full transceiver at 60 GHz has been achieved both in SiGe bipolar and CMOS technology. In the same time passive circuits working at 220 GHz have been achieved and characterized on high resistivity SOI demonstrating state-of-the-art performances and good agreement with electrical simulations using developed models. Moreover, HR SOI has also demonstrated some advantages concerning the performances of integrated antennas and a first fully integrated prototype with amplifier, filter and antenna has already been achieved using STMicroelectronics 130 nm CMOS HR SOI technology. This paper will review the MMW performances of STMicrolectronics 65 nm CMOS HR SOI technology from device up to circuit level and discuss the opportunities of MMW SoC integrated on CMOS HR SOI technology.