By Topic

65 nm HR SOI CMOS Technology: emergence of Millimeter-Wave SoC

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

9 Author(s)

Today, measurement of 65 nm CMOS and 130 nm-based SiGe HBTs technologies demonstrate both Ftau (current gain cut-off frequency) and Fmax (maximum oscillation frequency) higher than 200 GHz, which are clearly comparable to advanced commercially available 100 nm III-V HEMT. Consequently, the integration of full transceiver at 60 GHz has been achieved both in SiGe bipolar and CMOS technology. In the same time passive circuits working at 220 GHz have been achieved and characterized on high resistivity SOI demonstrating state-of-the-art performances and good agreement with electrical simulations using developed models. Moreover, HR SOI has also demonstrated some advantages concerning the performances of integrated antennas and a first fully integrated prototype with amplifier, filter and antenna has already been achieved using STMicroelectronics 130 nm CMOS HR SOI technology. This paper will review the MMW performances of STMicrolectronics 65 nm CMOS HR SOI technology from device up to circuit level and discuss the opportunities of MMW SoC integrated on CMOS HR SOI technology.

Published in:

Radio Frequency Integrated Circuits (RFIC) Symposium, 2007 IEEE

Date of Conference:

3-5 June 2007