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Development of Long-Range UHF-band RFID Tag chip Using Schottky Diodes in Standard CMOS Technology

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3 Author(s)
Nhan Tran ; School of Electronics and Information, Kyung Hee University, 446-701, Korea ; Bomson Lee ; Jong-Wook Lee

We present the design of three key building blocks for UHF-band passive RFID tag chip, i.e., voltage multiplier, ASK demodulator, and internal clock generator. An analysis on a simple equivalent circuit of RFID tag chip for long reading range is presented taking into account the finite turn-on voltage of tag chip. The Schottky diodes used in the passive RFID tag chip were fabricated using titanium (Ti/Al/Ta/Al)-silicon (n-type) junction in 0.35 mum CMOS process, and the effect of size of Schottky diode on the turn-on voltage and the input impedance of the voltage multiplier was investigated. For 300 mV RF input voltage, the fabricated voltage multiplier using Schottky diodes generated output voltages of 1.5 V and corresponding voltage conversion efficiency of 45%. In addition, we propose an example circuit for internal oscillator of tag chip with digital calibration, which can generate precise copy of RFID reader timing signals.

Published in:

2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium

Date of Conference:

3-5 June 2007