A Low-Power Low-Noise Single-Chip Receiver Front-End for Automotive Radar at 77 GHz in Silicon-Germanium Bipolar Technology

This paper presents a single chip receiver front-end, including low-noise amplifier and mixer, for application in automotive radar systems at 77GHz. The circuit has been implemented in a SiGe HBT technology. The complete circuit occupies 1030 × 1130
μm²
including bond pads and dissipates 440mW from a 5.5V supply. The front-end shows a minimum measured single sideband noise figure (SSB NF) of 11.5dB and a maximum conversion gain of 30dB at 77GHz. Linearity measurements show a 1dB input compression point of -26dBm and a third order intercept point of -21.6dBm at 77GHz.