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A Highly Linear Broadband CMOS LNA Employing Noise and Distortion Cancellation

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4 Author(s)
Wei-Hung Chen ; Berkeley Wireless Research Center, University of California, Berkeley, CA ; Gang Liu ; Boos Zdravko ; Ali M. Niknejad

This paper presents a broadband very low 3rd -order intermodulation inductor-less low-noise amplifier (LNA) implemented in 0.13 mum CMOS technology. The LNA consists of a common-gate input stage for wideband impedance matching, followed by two parallel common source amplifiers which perform noise and distortion cancellation. Third-order distortion due to amplifier's second-order interaction is further minimized by employing a low second-order distortion PMOS/NMOS input pair. This LNA achieves +16 dBm IIP3 in both the 900 MHz and 2 GHz bands. The LNA maintains minimum internal gain 14.5 dB, noise figure below 2.6 dB from 800 MHz-2.1 GHz while drawing 11.6 mA from a supply of 1.5 V.

Published in:

2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium

Date of Conference:

3-5 June 2007