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Enhanced Maximum Modal Gain of 1.3-μm Antimony Mediated InAs Self-Assembled Quantum-Dot Lasers

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9 Author(s)
M. Ishida ; Institute of Industrial Science (IIS), The University of Tokyo, 4-6-1 Meguro-ku, Komaba, Tokyo 153-8094, JAPAN; Reserch Center for Advanced Science and Technology (RCAST), The University of Tokyo, 4-6-1 Meguro-ku, Komaba, Tokyo 153-8094, JAPAN; Nanoelectronics Collaborative Research Center (NCRC), IIS & RCAST, The University of Tokyo, 4-6-1 Meguro-ku, Komaba, Tokyo 153-8094, JAPAN, E-mail. mishida@iis.u-tokyo.ac.jp ; K. Watanabe ; N. Kumagai ; Y. Nakata
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Gain characteristics of antimony-mediated high-density InAs quantum-dot lasers were evaluated. For the lasers with 5 and 10 quantum dot layers, 88% and 39% increase in the maximum modal gain, respectively, was obtained compared with that of conventional InAs quantum dots.

Published in:

2007 IEEE 19th International Conference on Indium Phosphide & Related Materials

Date of Conference:

14-18 May 2007