Cart (Loading....) | Create Account
Close category search window
 

Epitaxial Growth of (In)GaPN Systems for Monolithic Optoelectronic Integrated Circuits on Si Substrates

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Yonezu, H. ; Toyohashi Univ. of Technol., Toyohashi ; Furukawa, Y. ; Wakahara, A.

The fundamental problems of the growth of III-V compounds on a Si substrate were overcome. As a result, structural defect-free GaPN and InGaPN layers were grown on a Si substrate. LEDs and Si MOSFETs, which are elemental devices for OEICs, were monolithically merged in a single chip. The developed processing flow was based on a conventional MOSFET processing flow. The growth and fabrication process technologies are effective for the realization of monolithic OEICs.

Published in:

Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on

Date of Conference:

14-18 May 2007

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.