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Epitaxial Growth of (In)GaPN Systems for Monolithic Optoelectronic Integrated Circuits on Si Substrates

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3 Author(s)
H. Yonezu ; Department of Electrical and Electronic Engineering, Toyohashi University of Technology, Toyohashi, Aichi, 441-8580, Japan ; Y. Furukawa ; A. Wakahara

The fundamental problems of the growth of III-V compounds on a Si substrate were overcome. As a result, structural defect-free GaPN and InGaPN layers were grown on a Si substrate. LEDs and Si MOSFETs, which are elemental devices for OEICs, were monolithically merged in a single chip. The developed processing flow was based on a conventional MOSFET processing flow. The growth and fabrication process technologies are effective for the realization of monolithic OEICs.

Published in:

2007 IEEE 19th International Conference on Indium Phosphide & Related Materials

Date of Conference:

14-18 May 2007