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Surface Passivation Effect of Electron-Beam Resist on InAs Quantum Dots and Their Improved Luminescence Efficiency

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5 Author(s)
Y. Idutsu ; Research Institute for Electronic Science, Hokkaido University, Kita-21, Nishi-10, Sapporo 001-0022, Japan; Japan Science and Technology Corporation (CREST), Saitama 332-0012, Japan ; Y. Hayashi ; M. Endo ; K. Uesugi
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Surface passivation effect of electron-beam resist (EBR) on InAs quantum dots (QDs) was studied to fabricate nano devices based on QDs open to air. When polymethylmethacrylate (PMMA) was coated on InAs QD surfaces, the luminescence spectra and efficiencies were stably preserved for more than months. On the other hand, other EBRs such as ZEP or SAL were coated, photoluminescence (PL) efficiencies were decreased and the modification of QD structures were observed after the removal of EBRs. The enhancement or suppression of PL intensities was observed depending on the coated EBR thicknesses, which was attributed to the multiple optical reflection effect of emitted photons within the transparent EBR layers.

Published in:

2007 IEEE 19th International Conference on Indium Phosphide & Related Materials

Date of Conference:

14-18 May 2007