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InGaAs/InAlAs Five-Layer Asymmetric Coupled Quantum Well and Its Application to Compact and Low-Voltage Optical Switch

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6 Author(s)
T. Arakawa ; Graduate School of Engineering, Yokohama National University ; Takahiro Toya ; K. Yamaguchi ; T. Uchimura
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An InGaAs/InAlAs five-layer asymmetric coupled quantum well (FACQW) for giant electrorefractive (ER) sensitivity was proposed and studied theoretically and experimentally. Giant ER sensitivity dn/dF (4.4 times 10-4 cm/kV) over 100 nm wavelength range can be expected at around electric field F =-30 ~-60 kV/cm. In addition, a compact and low-voltage FACQW modulator and a 2 times 2 switch with multi-mode interferer (MMI) couplers were also proposed and static operation characteristics were analyzed using BPM. The switching voltage can be reduced to 0.1~0.2 V.

Published in:

2007 IEEE 19th International Conference on Indium Phosphide & Related Materials

Date of Conference:

14-18 May 2007