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Room Temperature Dry Etching of INP-Based Semiconductors for Optoelectronic Device Fabrication Using Inductively Coupled Plasma

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5 Author(s)

Dry etching of InP-based semiconductors is carried out by inductively coupled plasma (ICP) for optoelectronic device fabrication. The etching conditions for different chemical mixtures are optimized to ensure high anisotropy and smooth surface morphology.

Published in:

Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on

Date of Conference:

14-18 May 2007