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A Compact Thermal-Via Packaging Design of GaInP/GaAs Collector-Up HBTs in Small High-Power Amplifiers

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3 Author(s)
Lee, P.H. ; Nat. Cheng Kung Univ., Tainan ; Chou, J.H. ; Tseng, H.C.

We model the thermal performance of the large thermal via which under the collector-up heterojunction bipolar transistor (HBT) by using a finite element method. A compact thermal-via packaging of GaInP/GaAs collector-up HBTs has been designed and calculated. The results indicate that the configuration can be further reduced by 29% to meet the requirement of small high-power amplifiers for cellular-phone communication systems.

Published in:

Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on

Date of Conference:

14-18 May 2007