By Topic

Strain Issues on Crystal Growth of Bulk InGaAs from GaAs Seed

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Islam, M.R. ; Khulna Univ. of Eng. & Technol., Khulna ; Rahman, M.S. ; Verma, P. ; Yamada, M.

Strain issues in bulk InxGa1-xAs crystals grown from GaAs seed have been investigated using Raman scattering and energy dispersive X-ray experiments. It has been found that there exists a large amount of residual strain in bulk InxGa1-xAs crystals grown by the traveling liquidus zone (TLZ) and multi-component zone melting (MCZM) methods. Using axially symmetrical strain model, strain distributions have been evaluated for various possible compositional profiles including the profile currently used in the MCZM method. It has been found that the residual strain can be reduced remarkably by changing the profile presently being used in this growth method. It is expected that high-quality bulk In0.3Ga0.7As crystal can be obtained by the TLZ method using In0.3Ga0.7As seed-crystal which may be prepared by the MCZM method following the profile suggested in the present study.

Published in:

Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on

Date of Conference:

14-18 May 2007