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The new FET model presented in this paper highlights a method through which complex current flow dynamics, arising from typical dispersion phenomena, can be modeled in equivalent circuits. Static and bias-dependant dynamic/pulsed currents are characterized using a new single mathematical expression and subsequently implemented into a large-signal circuit topology as a single current source. The model is based on a well-established conventional DC model and only minimal alteration is required. In this work we extend the range of validity to full large-signal operation including accurate prediction of nonlinear harmonic distortion and inter-modulation distortion (IMD) products. Furthermore, the single current source approach enhances the overall equivalent circuit topology's consistency with the physical device, a particularly favorable feature in such device models.