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A new compact DC and large-signal physics-based non-quasi-static (NQS) MOSFET model is proposed, suitable for partially-depleted body-tied silicon-on-insulator (SOI) MOSFETs. The developed four-terminal nonlinear model is comprised solely of fully-continuous explicit expressions that allow for quick simulation times and accurate intermodulation distortion analysis. Nonlinear depletion capacitances, as well as short-channel effects such as drain-induced barrier lowering, have been included, while the self-heating effects of SOI MOSFETs are modeled using a first-order thermal RC circuit. NQS distributed channel behaviour is accounted for by using a segmented channel model allowing the model in principle to operate up to high mm-wave frequencies. The model is verified for DC and large signal one-/multi-tone operation as well as through WCDMA measurements.