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A 1-Mbps 1.6-μA Micro-power Active-RFID CMOS LSI for the 300-MHz Frequency Band

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3 Author(s)
Kenji Suzuki ; NTT Microsystem Integration Laboratories, 3-1, Morinosato Wakamiya, Atsugi-shi, Kanagawa Pref., 243-0198, Japan ; Mamoru Ugajin ; Mitsuru Harada

A micro-power active-RFID LSI with an all-digital RF-transmitting scheme achieves experimental 10-m-distance communication with a 1-Mbps data rate in the 300-MHz frequency band. The IC consists of a RF transmitter and a power-supply circuit, which controls the energy flow from the battery to the IC, and offers intermittent operation of the RF transmitter. The IC draws 1.6 μA from a 3.4-V supply and is implemented in a 0.2-μm CMOS in an area of 1 mm2. The estimated lifetime of the IC is over ten years with a micro-size battery.

Published in:

2007 IEEE/MTT-S International Microwave Symposium

Date of Conference:

3-8 June 2007