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Design of a 20 GHz Low Loss Ohmic Contact RF MEMS Switch

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3 Author(s)
Goins, D.A. ; TeraVicta Technol. Inc., Austin ; Nelson, R.D. ; McKillop, J.S.

The design of a 20 GHz RF MEMS switch uses proven elements from previous designs operating from DC to 7 GHz. Extensive analysis of the RF performance of the original switch showed certain bandwidth limitations. Elimination of RF resonances, along with the addition of incremental ground vias and shortening of conducting stubs significantly improved performance. Prototypes of the modified switch have demonstrated outstanding RF performance from DC to more than 20 GHz. Typical performance shows less than 0.4 dB insertion loss, more than 20 dB return loss, and 25 dB isolation (@ 20 GHz).

Published in:

Microwave Symposium, 2007. IEEE/MTT-S International

Date of Conference:

3-8 June 2007