By Topic

Novel Approach to Low-Voltage Low-Power Bandgap Reference Voltage in Standard CMOS Process

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Christian Jesus B. Fayomi ; Université du Québec à Montréal, Computer Science Department, Microelectronics Laboratory, President Kennedy Hall, PK-4630, 201 President Kennedy Avenue, Montreal, Quebec, CANADA. H2X 3Y7 ; Stephen J. Stratz

This paper presents a novel approach to the design and post-layout simulation results of a low-voltage and low-power bandgap reference voltage in standard CMOS process. The proposed circuit makes use of a positive-and negative-temperature coefficient PTAT summed up to a resistive load to generate a low TC bandgap output reference voltage. Hspice-based simulations demonstrate that the reference circuit temperature coefficient (TC) is 93.3 ppm/degC in the temperature range from -20 to +70degC under a 1 V supply voltage while dissipating 86.19 muW. The output can be adjusted to a desired level independently of being set to a specific TC by the selection of the design parameters such as resistors, and transistor aspect ratios.

Published in:

2006 13th IEEE International Conference on Electronics, Circuits and Systems

Date of Conference:

10-13 Dec. 2006