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This paper presents a novel approach to the design and post-layout simulation results of a low-voltage and low-power bandgap reference voltage in standard CMOS process. The proposed circuit makes use of a positive-and negative-temperature coefficient PTAT summed up to a resistive load to generate a low TC bandgap output reference voltage. Hspice-based simulations demonstrate that the reference circuit temperature coefficient (TC) is 93.3 ppm/degC in the temperature range from -20 to +70degC under a 1 V supply voltage while dissipating 86.19 muW. The output can be adjusted to a desired level independently of being set to a specific TC by the selection of the design parameters such as resistors, and transistor aspect ratios.