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In this paper, the characteristics of the osmium (Os) in textured CoFe/IrMn magnetic film multilayer structure system is investigated and the characteristics of buffer layer and diffusion barrier is also reported. To examine the magnetic behavior, magneto-optical Kerr effect (MOKE) and vibrating sample magnetometer (VSM) are used and XRD is used to examine the crystal structure. As a result, a textured Ta/CoFe/Os(d)/IrMn is successfully grown on Os(0002)/Cu(002) seed layer by MMES method and at high temperature Os barrier stabilizes the CoFe/IrMn. Also, the exchange field is shown to vary with annealing temperature and Os thickness, and, no exchange bias is observed with dges1 nm.