Width-dependent Statistical Leakage Modeling for Random Dopant Induced Threshold Voltage Shift

Statistical behavior of device leakage and threshold voltage shows a strong width dependency under microscopic random dopant fluctuation. Leakage estimation using the conventional square-root method shows a discrepancy as large as 45% compared to the real case because it fails to model the effective V
_T
shift in the subthreshold region. This paper presents a width-dependent statistical leakage model with an estimation error less than 5%. Design examples on SRAMs and domino circuits demonstrate the significance of the proposed model.