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Width-dependent Statistical Leakage Modeling for Random Dopant Induced Threshold Voltage Shift

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3 Author(s)
Jie Gu ; Univ. of Minnesota, Minneapolis ; Sapatnekar, S.S. ; Kim, C.

Statistical behavior of device leakage and threshold voltage shows a strong width dependency under microscopic random dopant fluctuation. Leakage estimation using the conventional square-root method shows a discrepancy as large as 45% compared to the real case because it fails to model the effective VT shift in the subthreshold region. This paper presents a width-dependent statistical leakage model with an estimation error less than 5%. Design examples on SRAMs and domino circuits demonstrate the significance of the proposed model.

Published in:

Design Automation Conference, 2007. DAC '07. 44th ACM/IEEE

Date of Conference:

4-8 June 2007