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A 20 dBm Fully-Integrated 60 GHz SiGe Power Amplifier With Automatic Level Control

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2 Author(s)
Ullrich R. Pfeiffer ; IBM Thomas J. Watson Res. Center, Yorktown Heights ; David Goren

A + 20 dBm power amplifier (PA) for applications in the 60 GHz industrial scientific medical (ISM) band is presented. The PA is fabricated in a 0.13-mum SiGe BiCMOS process technology and features a fully-integrated on-chip RMS power detector for automatic level control (ALC), built-in self test and voltage standing wave ratio (VSWR) protection. The single-stage push-pull amplifier uses center-tapped microstrips for a highly efficient and compact layout with a core area of 0.075 mm2. The PA can deliver up to 20 dBm, which to date, is the highest reported output power at mm-wave frequencies in silicon without the need for power combining. At 60 GHz it achieves a peak power gain of 18 dB, a 1-dB compression (P1dB) of 13.1 dBm, and a peak power-added efficiency (PAE) of 12.7%. The amplifier is programmable through a three-wire serial digital interface enabeling an adaptive bias control from a 4-V supply.

Published in:

IEEE Journal of Solid-State Circuits  (Volume:42 ,  Issue: 7 )