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Cu Annealing Using Various Concentrations of Hydrogen in a Flexible Hot-Wall Thermal Processing Tool

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7 Author(s)
Ouaknine, M. ; WaferMasters, Inc., San Jose ; Ueda, T. ; Fukada, T. ; Malik, Igor J.
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The importance of stabilizing deposited Cu layers through annealing is discussed. We describe wafer processing in a hot wall annealing tool using inert (nitrogen) and reducing (hydrogen added to nitrogen) ambient.

Published in:

Advanced Semiconductor Manufacturing Conference, 2007. ASMC 2007. IEEE/SEMI

Date of Conference:

11-12 June 2007