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Cu Annealing Using Various Concentrations of Hydrogen in a Flexible Hot-Wall Thermal Processing Tool

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7 Author(s)
Michel Ouaknine ; WaferMaster, Inc., 246 East Gish Road, San Jose, CA 95112, U.S.A. ; Takeshi Ueda ; Takashi Fukada ; Igor J. Malik
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The importance of stabilizing deposited Cu layers through annealing is discussed. We describe wafer processing in a hot wall annealing tool using inert (nitrogen) and reducing (hydrogen added to nitrogen) ambient.

Published in:

2007 IEEE/SEMI Advanced Semiconductor Manufacturing Conference

Date of Conference:

11-12 June 2007