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Very low threshold current densities (under 100 A/cm2) in AlGaAs/GaAs single-quantum-well GRINSCH lasers grown by molecular beam epitaxy

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4 Author(s)
Chen, H.Z. ; California Institute of Technology, Applied Physics Department, Pasadena, USA ; Ghaffari, A. ; Morkoc, H. ; Yariv, A.

Threshold current densities as low as 80 A/cm2 for 3.3 mm-long cavity lasers, and 93 A/cm2 for 520 ¿m-long cavity lasers have been obtained in AlGaAs/GaAs graded-index separate-confinement heterostructure (GRINSCH) single-quantum-well lasers with quantum-well widths between 65¿165 A grown by molecular beam epitaxy. The structures were prepared on (100) GaAs substrates and do not display the earlier reported dependence of lasing threshold characteristics on the quantum-well thickness in the range studied (65¿165 A).

Published in:

Electronics Letters  (Volume:23 ,  Issue: 25 )