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MOSFET model continuous from weak to strong inversion

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2 Author(s)
Abu-Zeid, M.M. ; Eindhoven University of Technology, Eindhoven, Netherlands ; de Jong, G.G.

A simple analytical model is proposed for long-channel MOSFETs. The model describes MOSFET operation in all regions from weak to strong inversion by a single exponential equation. This makes its implementation in CAD easy and time-saving. Predicted and experimental data are in good agreement.

Published in:

Electronics Letters  (Volume:23 ,  Issue: 24 )