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Novel fabrication method of quarter-wave-shifted gratings using ECR-CVD SiNx films

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4 Author(s)
H. Sugimoto ; Mitsubishi Electric Corporation, Central Research Laboratory, Amagasaki, Japan ; Y. Abe ; T. Matsui ; H. Ogata

Quarter-wave-shifted gratings were fabricated by novel methods using ECR-CVD SiN, films. SiNx films deposited on photoresist and grooves have a higher etching rate than those deposited on the flat substrate. We made good use of this difference to fabricate the quarter-wave-shifted gratings with a 240 nm period, about 150nm depth and narrow transient regions.

Published in:

Electronics Letters  (Volume:23 ,  Issue: 24 )