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GaInAsP buried channel ea modulator for 13 μm fibre links

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6 Author(s)
S. C. Lin ; University of California at San Diego, Department of Electrical & Computer Engineering, La Jolla, USA ; X. L. Jing ; M. K. Chin ; L. M. Walpita
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Double-heterostructure (DH) GaInAsP/InP buried channel waveguide electroabsorption (EA) modulators are demonstrated. They are designed for external intensity modulation of 1·3 μm laser light and direct coupling to single-mode fibre. For a 650 μm-long device, a 30 dB on/off ratio has been achieved at a bias voltage of - 9 V. The substrate light is found to be a limiting factor of the measured extinction ratio for short modulators, but not for long (1·8 mm) modulators.

Published in:

Electronics Letters  (Volume:23 ,  Issue: 24 )